Datasheet4U Logo Datasheet4U.com

PMF63UNE - N-channel Trench MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

📥 Download Datasheet

Datasheet Details

Part number PMF63UNE
Manufacturer Nexperia
File Size 705.09 KB
Description N-channel Trench MOSFET
Datasheet download datasheet PMF63UNE Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMF63UN single N-channel Trench MOSFET NXP Semiconductors
PMF6.0A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE SunMate
PMF6.0CA SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE SunMate
PMF6.5A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE SunMate
PMF6.5CA SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE SunMate

Other Datasheets by Nexperia

Part Number Description
PMF170XP P-channel MOSFET
PMF250XNE N-channel MOSFET
PMFPB8032XP P-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMF63UNE 20 V, N-channel Trench MOSFET 20 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • LED driver • Power management • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.