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PMFPB8032XP - P-channel MOSFET

General Description

Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • 1.8 V RDSon rated for low-voltage gate drive.
  • Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm.
  • Exposed drain pad for excellent thermal conduction.
  • Integrated ultra low VF MEGA Schottky diode 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 1.8 V RDSon rated for low-voltage gate drive • Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm • Exposed drain pad for excellent thermal conduction • Integrated ultra low VF MEGA Schottky diode 3.