PMGD175XNE - dual N-channel MOSFET

Nexperia

General Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

Low threshold voltage.
Very fast switching.
Trench MOSFET technology.
ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

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PMGD175XNE dual n-channel mosfet by Nexperia - Datasheet Preview

Datasheet Details

Part number	PMGD175XNE
Manufacturer	Nexperia
File Size	720.92 KB
Description	dual N-channel MOSFET
Datasheet	PMGD175XNE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMGD175XNE 30 V, Dual N-channel Trench MOSFET 15 April 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Per transistor VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.