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PMGD290UCEA - N/P-channel MOSFET

General Description

Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Very fast switching.
  • Trench MOSFET technology.
  • 2 kV ESD protection.
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMGD290UCEA 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET 28 March 2014 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • 2 kV ESD protection • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits • Automotive applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions TR1 (N-channel), Static characteristics RDSon drain-source on-state VGS = 4.