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PMPB13R6XN - 30V N-channel Trench MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Trench MOSFET technology.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.6 mm.
  • Exposed drain pad for excellent thermal conduction 3.

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Datasheet Details

Part number PMPB13R6XN
Manufacturer Nexperia
File Size 313.58 KB
Description 30V N-channel Trench MOSFET
Datasheet download datasheet PMPB13R6XN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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202D0FM-N6 PMPB13R6XN 30 V, N-channel Trench MOSFET 13 February 2025 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.6 mm • Exposed drain pad for excellent thermal conduction 3. Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portables • Hard disk and computing power management 4. Quick reference data Table 1.