Datasheet4U Logo Datasheet4U.com

PMPB20XNEA - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMPB20XPE single P-channel Trench MOSFET NXP
PMPB20EN 30V N-channel Trench MOSFET NXP
PMPB20UN single N-channel Trench MOSFET NXP Semiconductors
PMPB215ENEA single N-channel Trench MOSFET NXP
PMPB23XNE single N-channel Trench MOSFET NXP

Other Datasheets by Nexperia

Part Number Description
PMPB20XPE P-channel MOSFET
PMPB20XPEA P-channel MOSFET
PMPB20EN N-channel MOSFET
PMPB20SNA N-channel Trench MOSFET
PMPB215ENEA N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMPB20XNEA 20 V, N-channel Trench MOSFET 22 February 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.