PMV120ENEA
description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic level patible
- Very fast switching
- Trench MOSFET technology
- Electro Static Discharge (ESD) protection > 2 k V HBM
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 2.1 A; Tj = 25 °C
Min Typ Max Unit
- - 60 V
-20
- 20 V
[1]
- - 2.1 A
- 96 123 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper,...
