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PMV170EPA - 80V P-channel Trench MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Logic-level compatible.
  • Very fast switching.
  • Trench MOSFET technology.
  • Extended temperature range Tj = 175 °C.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PMV170EPA
Manufacturer Nexperia
File Size 281.92 KB
Description 80V P-channel Trench MOSFET
Datasheet download datasheet PMV170EPA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMV170EPA 80 V, P-channel Trench MOSFET 1 October 2025 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • Extended temperature range Tj = 175 °C • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4. Quick reference data Table 1.