PMV170EPA
description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- Extended temperature range Tj = 175 °C
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions 25 °C ≤ Tj ≤ 175 °C Tj = 25 °C VGS = -10 V; Tamb = 25 °C
VGS = -10 V; ID = -1.6 A; Tj = 25 °C
Min Typ Max Unit
- -
-80 V
[1]
-20
- 20
[2]
- -
-1.6 A
- 170 225 mΩ
[1] See application node AN90001. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
PMV1...
