Datasheet4U Logo Datasheet4U.com

PMV40UN2 - N-Channel MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Very fast switching.
  • Enhanced power dissipation capability of 1000 mW 3.

📥 Download Datasheet

Datasheet preview – PMV40UN2

Datasheet Details

Part number PMV40UN2
Manufacturer nexperia
File Size 714.49 KB
Description N-Channel MOSFET
Datasheet download datasheet PMV40UN2 Datasheet
Additional preview pages of the PMV40UN2 datasheet.

📁 Similar Datasheet

  • PMV40UN - TrenchMOS ultra low level FET (NXP)
  • PMV45EN - N-channel TrenchMOS logic level FET (NXP)
  • PMV45EN2 - N-channel Trench MOSFET (NXP)
  • PMV48XP - MOSFET (NXP Semiconductors)
  • PMV48XPA - P-channel Trench MOSFET (NXP Semiconductors)
  • PMV117EN - uTrenchMOS enhanced logic level FET (NXP)
  • PMV117EN - N-Channel MOSFET (VBsemi)
  • PMV130ENEA - N-channel Trench MOSFET (NXP)
  • PMV160UP - 1.2A P-channel Trench MOSFET (NXP Semiconductors)
  • PMV16UN - N-channel Trench MOSFET (NXP Semiconductors)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1000 mW 3. Applications • LED driver • Power management • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 3.
Published: |