Datasheet4U Logo Datasheet4U.com

PMX100UNE - N-channel Trench MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Trench MOSFET technology.
  • Low profile (0.25 mm).
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.

📥 Download Datasheet

Datasheet preview – PMX100UNE

Datasheet Details

Part number PMX100UNE
Manufacturer nexperia
File Size 269.07 KB
Description N-channel Trench MOSFET
Datasheet download datasheet PMX100UNE Datasheet
Additional preview pages of the PMX100UNE datasheet.

📁 Similar Datasheet

Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PMX100UNE 20 V, N-channel Trench MOSFET 18 May 2022 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Low profile (0.25 mm) • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • Battery switch • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.
Published: |