Datasheet Details
| Part number | PMXB75UPE |
|---|---|
| Manufacturer | Nexperia |
| File Size | 734.37 KB |
| Description | P-channel MOSFET |
| Datasheet |
 PMXB75UPE Datasheet
|
|
|
General Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Key Features
- Trench MOSFET technology.
- Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm.
- Exposed drain pad for excellent thermal conduction.
- ElectroStatic Discharge (ESD) protection 1.5 kV HBM.
- Drain-source on-state resistance RDSon = 69 mΩ.
- Very low gate-source threshold voltage for portable.
