PMZB320UPE - P-channel MOSFET

Product Overview

nexperia

Datasheet Details

Part number	PMZB320UPE
Manufacturer	nexperia
File Size	708.34 KB
Description	P-channel MOSFET
Datasheet	PMZB320UPE Datasheet
Additional preview pages of the PMZB320UPE datasheet.

Product details

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology.
Low threshold voltage.
Very fast switching.
ElectroStatic Discharge (ESD) protection > 2 kV HBM.
Ultra thin package profile of 0.37 mm 3.

📁 Similar Datasheet

PMZB320UPE - P-channel Trench MOSFET (NXP)
PMZB300XN - single N-channel Trench MOSFET (NXP Semiconductors)
PMZB350UPE - single P-channel Trench MOSFET (NXP Semiconductors)
PMZB370UNE - MOSFET (NXP Semiconductors)
PMZB380XN - MOSFET (NXP Semiconductors)
PMZB390UNE - N-channel Trench MOSFET (NXP)
PMZB1200UPE - P-channel Trench MOSFET (NXP)
PMZB150UNE - N-channel Trench MOSFET (NXP)

Other Datasheets by nexperia

PMZB350UPE - P-channel MOSFET
PMZB370UNE - N-channel MOSFET
PMZB390UNE - N-channel MOSFET
PMZB1200UPE - P-channel MOSFET
PMZB150UNE - N-channel MOSFET
PMZB170VNE - 12V N-channel Trench MOSFET

Published: Jul 28, 2019 |