Datasheet4U Logo Datasheet4U.com

PMZB600UNE - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM.
  • Drain-source on-state resistance RDSon = 470 mΩ 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMZB600UNE N-channel Trench MOSFET NXP
PMZB670UPE single P-channel Trench MOSFET NXP
PMZB1200UPE P-channel Trench MOSFET NXP
PMZB150UNE N-channel Trench MOSFET NXP
PMZB200UNE N-channel Trench MOSFET NXP

Other Datasheets by nexperia

Part Number Description
PMZB600UNEL N-channel MOSFET
PMZB670UPE single P-channel Trench MOSFET
PMZB1200UPE P-channel MOSFET
PMZB150UNE N-channel MOSFET
PMZB170VNE 12V N-channel Trench MOSFET

Full PDF Text Transcription

Click to expand full text
PMZB600UNE 20 V, N-channel Trench MOSFET 21 July 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Leadless ultra small SMD plastic package: 1.0 × 0.6 × 0.37 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM • Drain-source on-state resistance RDSon = 470 mΩ 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.
Published: |