Datasheet4U Logo Datasheet4U.com

PNE20060CPE-Q - dual common cathode hyperfast recovery rectifier

General Description

High power density, hyperfast switching time dual recovery rectifier in common cathode configuration with high-efficiency planar technology, encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Reverse voltage: VR ≤ 200 V.
  • Forward current: IF ≤ 3 A (per diode).
  • Switching time: trr ≤ 30 ns.
  • Pt doped life time control.
  • Low inductance.
  • Power and flat lead SMD plastic package.
  • Package height typical 0.95 mm.
  • High power capability due to clip-bond technology.
  • Planar die design.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

📥 Download Datasheet

Datasheet Details

Part number PNE20060CPE-Q
Manufacturer Nexperia
File Size 276.91 KB
Description dual common cathode hyperfast recovery rectifier
Datasheet download datasheet PNE20060CPE-Q Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Nexperia

Part Number Description
PNE20010ER 1A hyperfast recovery rectifier
PNE20020EP 2A hyperfast PN-rectifier
PNE20020ER 2A hyperfast recovery rectifier
PNE20040CPE dual common cathode hyperfast recovery rectifier
PNE20080CPE 200V dual common cathode hyperfast recovery rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PNE20060CPE-Q 200 V, 2 x 3 A dual common cathode hyperfast recovery rectifier 15 July 2024 Product data sheet 1. General description High power density, hyperfast switching time dual recovery rectifier in common cathode configuration with high-efficiency planar technology, encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Reverse voltage: VR ≤ 200 V • Forward current: IF ≤ 3 A (per diode) • Switching time: trr ≤ 30 ns • Pt doped life time control • Low inductance • Power and flat lead SMD plastic package • Package height typical 0.95 mm • High power capability due to clip-bond technology • Planar die design • Qualified according to AEC-Q101 and recommended for use in automotive applications 3.