PSC2065J
description
Nexperia introduces leading edge Silicon Carbide (Si C) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The Si C Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior bined with an outstanding figure-of-merit (QC x VF). The Merged Pi N Schottky (MPS) diode improves the robustness expressed in a high IFSM.
2. Features and benefits
- Zero forward and reverse recovery
- Temperature independent fast and smooth switching performance
- Outstanding figure of merit (Qc x VF)
- High IFSM capability
- High power density
- Reduced system costs
- System miniaturization
- Reduced EMI
3. Applications
- Switch mode power Supply (SMPS)
- AC-DC and DC-DC converter
- Battery charging infrastructure
- Server and tele power supply
- Uninterruptible power supply (UPS)
- Photovoltaic inverters
4....
