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PSMN013-40VLD - Dual N-channel MOSFET

General Description

Dual, logic level N-channel MOSFET in an LFPAK56D package (halfbridge configuration), using NextpowerS3 technology.

Key Features

  • LFPAK56D package with half-bridge configuration enables:.
  • Reduced PCB layout complexity.
  • Module shrinkage through reduced component count.
  • Improved system level Rth(j-amb) due to optimized package design.
  • Lower parasitic inductance to support higher efficiency.
  • Footprint compatibility with LFPAK56D Dual package.
  • NextpowerS3 technology.
  • Low power losses, high power density.
  • Superior avalanche performance.
  • R.

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Full PDF Text Transcription for PSMN013-40VLD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PSMN013-40VLD. For precise diagrams, and layout, please refer to the original PDF.

PSMN013-40VLD Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) 14 December 2023 Product data sheet 1. General description Dual, log...

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) 14 December 2023 Product data sheet 1. General description Dual, logic level N-channel MOSFET in an LFPAK56D package (halfbridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side G1 FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive applications G2 D1 S1, D2 S2 aaa-028081 2.

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