PSMN013-80YS Datasheet | Nexperia

description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - Advanced Trench MOS provides low RDSon and low gate charge - High efficiency gains in switching power converters - Improved mechanical and thermal characteristics - LFPAK provides maximum power density in a Power SO8 package 1.3 Applications - DC-to-DC converters - Lithium-ion battery protection - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics Tj ≥ 25 °C; Tj ≤ 150 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 QG(tot) total gate charge VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 Min Typ Max Unit - - 80 V - - 60 A - - 106 W -55 - 175 °C - - 70 m J - 8 - n C - 37 - n...