PSMN017-80PS Datasheet | Nexperia

description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for standard level gate drive sources 1.3 Applications - DC-to-DC converters - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Ptot total power dissipation Tj junction temperature Static characteristics Tmb = 25 °C; see Figure 2 RDSon drain-source on-state resistance Dynamic characteristics VGS = 10 V; ID = 10 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 10 A; Tj = 25 °C; see Figure 13 QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14; see Figure 15 Avalanche ruggedness EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; avalanche energy ID = 50 A; Vsup ≤ 80 V; RGS = 50 Ω; unclamped Min Typ Max Unit - - 80 V - - 50 A --55 - 103 W 175 °C - 15.2 29 mΩ - 13.7 17 mΩ - 6 - n C - 26 - n...