PSMN030-60YS Datasheet | Nexperia

N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET Rev. 02 - 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - Advanced Trench MOS provides low RDSon and low gate charge - High efficiency gains in switching power converters - Improved mechanical and thermal characteristics - LFPAK provides maximum power density in a Power SO8 package 1.3 Applications - DC-to-DC converters - Lithium-ion battery protection - Load switching - Motor control - Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 Ptot total power dissipation Tj junction temperature Static characteristics Tmb = 25 °C; see Figure 2 RDSon drain-source on-state resistance Dynamic characteristics VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure...