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PSMN057-200P - N-channel MOSFET

General Description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Key Features

  • Higher operating power due to low thermal resistance.
  • Low conduction losses due to low on-state resistance.
  • Suitable for high frequency.

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Full PDF Text Transcription for PSMN057-200P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PSMN057-200P. For precise diagrams, tables, and layout, please refer to the original PDF.

PSMN057-200P N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 4 January 2011 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard ...

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sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ Higher operating power due to low thermal resistance „ Low conduction losses due to low on-state resistance „ Suitable for high frequency applications due to fast switching characteristics 1.3 Applications „ DC-to-DC converters „ Switched-mode power supplies 1.4 Quick reference data Table 1.