PSMN0R9-25YLD
Description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
Key Features
- 100% Avalanche tested at I(AS) = 190 A
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
- Superfast switching with soft-recovery
- Low spiking and ringing for low EMI designs
- Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
- Optimised for 4.5 V gate drive
- Low parasitic inductance and resistance
- High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
- Wave solderable; exposed leads for optimal visual solder inspection
Applications
- Secondary-side synchronous rectification in telemunication applications
