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PSMN0R9-25YLD - N-channel MOSFET

General Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

Key Features

  • 100% Avalanche tested at I(AS) = 190 A.
  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
  • Superfast switching with soft-recovery.
  • Low spiking and ringing for low EMI designs.
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C.
  • Optimised for 4.5 V gate drive.
  • Low parasitic inductance and resistance.
  • High reliability clip bonded and solder.

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Full PDF Text Transcription for PSMN0R9-25YLD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PSMN0R9-25YLD. For precise diagrams, and layout, please refer to the original PDF.

PSMN0R9-25YLD N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 27 April 2016 Product data sheet 1. General description Logic leve...

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ogy 27 April 2016 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2.

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