Datasheet Details
| Part number | PSMN0R9-30ULD |
|---|---|
| Manufacturer | Nexperia |
| File Size | 263.29 KB |
| Description | N-channel MOSFET |
| Datasheet |
 PSMN0R9-30ULD Datasheet
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General Description
SOT1023A with improved creepage and clearance to meet UL2595 requirements.
300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
Key Features
- Improved creepage and clearance.
- meets the requirements of UL2595.
- 300 A capability.
- Avalanche rated, 100% tested at IAS = 190 A.
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
- Superfast switching with soft-recovery; s-factor > 1.
- Low spiking and ringing for low EMI designs.
- Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C.
