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PSMN1R0-30YLD Datasheet N-channel MOSFET

Manufacturer: Nexperia

Overview: PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 21 April 2023 Product data sheet 1.

General Description

300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Key Features

  • 300 Amp capability.
  • Avalanche rated, 100 % tested at I(as) = 190 Amps.
  • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
  • Superfast switching with soft-recovery; s-factor > 1.
  • Low spiking and ringing for low EMI designs.
  • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C.
  • Optimised for 4.5 V gate drive.
  • Low parasitic inductance and resista.

PSMN1R0-30YLD from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
NXP Logo PSMN1R0-30YLD N-channel MOSFET NXP
NXP Semiconductors Logo PSMN1R0-30YLC N-channel MOSFET NXP Semiconductors

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PSMN1R0-30YLD Distributor