PSMN1R0-30YLD Description
300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high...
PSMN1R0-30YLD Key Features
- 300 Amp capability
- Avalanche rated, 100 % tested at I(as) = 190 Amps
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
- Superfast switching with soft-recovery; s-factor > 1
- Low spiking and ringing for low EMI designs
- Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
- Optimised for 4.5 V gate drive
- Low parasitic inductance and resistance
- High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds
- Wave solderable; exposed leads for optimal visual solder inspection