PSMN1R0-30YLD Datasheet PDF - nexperia N-channel MOSFET Specs

PSMN1R0-30YLD - N-channel MOSFET

Datasheet Summary

Description

300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

Features

300 Amp capability.
Avalanche rated, 100 % tested at I(as) = 190 Amps.
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
Superfast switching with soft-recovery; s-factor > 1.
Low spiking and ringing for low EMI designs.
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C.
Optimised for 4.5 V gate drive.
Low parasitic inductance and resista.

Datasheet Details

Part number	PSMN1R0-30YLD
Manufacturer	nexperia
File Size	304.00 KB
Description	N-channel MOSFET
Datasheet	PSMN1R0-30YLD Datasheet
Additional preview pages of the PSMN1R0-30YLD datasheet.

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Full PDF Text Transcription

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PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 21 April 2023 Product data sheet 1. General description 300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2.

Published: Jul 5, 2019 |