PSMN1R2-30YLD Datasheet PDF - nexperia N-channel MOSFET Specs

PSMN1R2-30YLD - N-channel MOSFET

Datasheet Summary

Description

250 A logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

Features

250 A capability.
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies.
Superfast switching with soft-recovery; s-factor > 1.
Low spiking and ringing for low EMI designs.
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C.
Optimised for 4.5 V gate drive.
Low parasitic inductance and resistance.
High reliability clip bonded and solder die atta.

Datasheet Details

Part number	PSMN1R2-30YLD
Manufacturer	nexperia
File Size	298.08 KB
Description	N-channel MOSFET
Datasheet	PSMN1R2-30YLD Datasheet
Additional preview pages of the PSMN1R2-30YLD datasheet.

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Full PDF Text Transcription

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PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 21 December 2018 Product data sheet 1. General description 250 A logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2.

Published: Jul 5, 2019 |