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PSMN1R2-55SLH - N-channel MOSFET

Datasheet Summary

Description

330 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package.

Features

  • 330 Amp continuous current capability.
  • LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection.
  • Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating.
  • Ideal replacement for D2PAK and 10 x 12 mm leadless package types.
  • Qualified to 175 °C.
  • Avalanche rated, 100 % tested.
  • Low QG, QGD and QOSS for high efficie.

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Datasheet Details

Part number PSMN1R2-55SLH
Manufacturer nexperia
File Size 312.56 KB
Description N-channel MOSFET
Datasheet download datasheet PSMN1R2-55SLH Datasheet
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PSMN1R2-55SLH N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 28 February 2022 Product data sheet 1. General description 330 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.
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