PSMN1R2-55SLH Overview
330 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current....
PSMN1R2-55SLH Key Features
- 330 Amp continuous current capability
- LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability
- Copper-clip and solder die attach for low package inductance and resistance, and high ID(max)
- Ideal replacement for D2PAK and 10 x 12 mm leadless package types
- Qualified to 175 °C
- Avalanche rated, 100 % tested
- Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
- Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage
- Narrow VGS(th) rating for easy paralleling and improved current sharing
- Very strong linear-mode / safe operating area characteristics for safe and reliable switching at