Datasheet4U Logo Datasheet4U.com

PSMN1R2-55SLH - N-channel MOSFET

General Description

330 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package.

Key Features

  • 330 Amp continuous current capability.
  • LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection.
  • Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating.
  • Ideal replacement for D2PAK and 10 x 12 mm leadless package types.
  • Qualified to 175 °C.
  • Avalanche rated, 100 % tested.
  • Low QG, QGD and QOSS for high efficie.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PSMN1R2-25YL N-channel 25 V 1.2 MOhm Logic Level MOSFET NXP
PSMN1R2-25YLC N-channel 25V 1.3m ohm logic level MOSFET NXP
PSMN1R2-30YLC MOSFET NXP Semiconductors
PSMN1R2-30YLD N-channel MOSFET NXP
PSMN1R0-30YLC N-channel MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
PSMN1R2-25YL N-channel MOSFET
PSMN1R2-25YLC N-channel MOSFET
PSMN1R2-25YLD N-channel MOSFET
PSMN1R2-30YLC N-channel MOSFET
PSMN1R2-30YLD N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PSMN1R2-55SLH N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 28 February 2022 Product data sheet 1. General description 330 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.