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PSMN1R4-40YLD - N-channel MOSFET

Datasheet Summary

Description

240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

This product has been designed and qualified for high performance power switching applications.

2.

Features

  • 240 A capability.
  • Avalanche rated, 100% tested at IAS = 190 A.
  • NextPower-S3 technology delivers 'superfast switching with soft recovery'.
  • Low QRR, QG and QGD for high system efficiency and low EMI designs.
  • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage.
  • Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology.
  • High reliability LFPAK (Power SO8) package, copper-clip, sold.

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Datasheet Details

Part number PSMN1R4-40YLD
Manufacturer nexperia
File Size 289.29 KB
Description N-channel MOSFET
Datasheet download datasheet PSMN1R4-40YLD Datasheet
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PSMN1R4-40YLD N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology 14 March 2019 Product data sheet 1. General description 240 Amp, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2. Features and benefits • 240 A capability • Avalanche rated, 100% tested at IAS = 190 A • NextPower-S3 technology delivers 'superfast switching with soft recovery' • Low QRR, QG and QGD for high system efficiency and low EMI designs • Schottky-Plus body-diode, gives soft switching without the associated high IDSS leakage • Optimised for 4.
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