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PSMN1R5-50YLH - N-channel MOSFET

General Description

200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package.

Key Features

  • 200 A continuous current capability.
  • Optimised for 36 V (nominal) battery powered.

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Full PDF Text Transcription for PSMN1R5-50YLH (Reference)

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PSMN1R5-50YLH N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E 26 January 2022 Product data sheet 1. General description 20...

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LFPAK56E 26 January 2022 Product data sheet 1. General description 200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

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