Datasheet Summary
40 V standard level MOSFET
17 June 2019
Preliminary data sheet
1. General description
Standard level gate drive N-channel enhancement mode MOSFET.
2. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon drain-source on-state resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot) total gate charge
Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1
[1]
VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 8
ID = 25 A; VDS = 20 V; VGS = 10 V; Fig. 10; Fig. 11
Min Typ Max Unit
- - 40 V
- -...
