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PSMN1R9-80SSJ - N-channel 80V ASFET

General Description

In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability.

Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally.

Key Features

  • Removes the need for VGS(th) matching.
  • Low ΔID enhances current sharing in parallel.

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PSMN1R9-80SSJ N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88 13 January 2025 Preliminary data sheet 1. General description In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally. Small differences in VGS(th) for individual devices cause the MOSFET with the lowest VGS(th) to turnon first, taking a larger share of the load current during the dynamic switching phase. The difference in load current between individual MOSFETs (ΔID) can be significant often leading to differential heating and potential accelerated failure.