Datasheet Summary
N-channel 80 V, 1.9 mOhm ASFET with enhanced dynamic current sharing in LFPAK88
13 January 2025
Preliminary data sheet
1. General description
In high-power applications, it is mon practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally.
Small differences in VGS(th) for individual devices cause the MOSFET with the lowest VGS(th) to turnon first, taking a larger share of the load current during the dynamic switching phase.
The difference in load current between individual MOSFETs (ΔID) can be significant...