Datasheet Details
| Part number | PSMN2R0-55YLH |
|---|---|
| Manufacturer | Nexperia |
| File Size | 295.44 KB |
| Description | N-channel MOSFET |
| Datasheet |
 PSMN2R0-55YLH Datasheet
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| Part number | PSMN2R0-55YLH |
|---|---|
| Manufacturer | Nexperia |
| File Size | 295.44 KB |
| Description | N-channel MOSFET |
| Datasheet |
PSMN2R0-55YLH Datasheet
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200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET in LFPAK56E package.
Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.
The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe and reliable switching at high load-current.
PSMN2R0-55YLH N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E 11 July 2022 Product data sheet 1.
| Part Number | Description |
|---|---|
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