PSMN2R4-30YLD Overview
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency
PSMN2R4-30YLD Key Features
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
- Superfast switching with soft-recovery; s-factor > 1 - Low spiking and ringing for low EMI designs - Unique “SchottkyPlu
- Optimised for 4.5 V gate drive - Low parasitic inductance and resistance - High reliability clip bonded and solder die a
- Wave solderable; exposed leads for optimal visual solder inspection
PSMN2R4-30YLD Applications
- Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
- Superfast switching with soft-recovery; s-factor > 1 - Low spiking and ringing for low EMI designs - Unique “SchottkyPlu
- Optimised for 4.5 V gate drive - Low parasitic inductance and resistance - High reliability clip bonded and solder die a
- Wave solderable; exposed leads for optimal visual solder inspection
- On-board DC-to-DC solutions for server and telemunications - Secondary-side synchronous rectification in telemunication
- 30 V [1]
- 175 °C
- 2.7 3.1 mΩ
