PSMN2R5-30YL Overview
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and munications applications.
PSMN2R5-30YL Key Features
- High efficiency due to low switching and conduction losses
- Suitable for logic level gate drive sources
PSMN2R5-30YL Applications
- High efficiency due to low switching and conduction losses
- Suitable for logic level gate drive sources
