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PSMN2R6-30YLC - N-channel MOSFET

General Description

Logic level enhancement mode N-channel MOSFET in LFPAK package.

This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Key Features

  • High reliability Power SO8 package, qualified to 175°C.
  • Low parasitic inductance and resistance.
  • Optimised for 4.5V Gate drive utilising NextPower Superjunction technology.
  • Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3.

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Full PDF Text Transcription for PSMN2R6-30YLC (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PSMN2R6-30YLC. For precise diagrams, and layout, please refer to the original PDF.

PSMN2R6-30YLC N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 01 — 2 May 2011 Product data sheet 1. Product profile 1.1 General descripti...

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2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ High reliability Power SO8 package, qualified to 175°C „ Low parasitic inductance and resistance „ Optimised for 4.5V Gate drive utilising NextPower Superjunction technology „ Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Po

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Semiconductors Logo PSMN2R6-30YLC N-channel MOSFET NXP Semiconductors

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