PSMN2R6-30YLC Datasheet | Nexperia

N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using Next Power technology Rev. 01 - 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, munications and domestic equipment. 1.2 Features and benefits - High reliability Power SO8 package, qualified to 175°C - Low parasitic inductance and resistance - Optimised for 4.5V Gate drive utilising Next Power Superjunction technology - Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applications - DC-to-DC converters - Lithium-ion battery protection - Load switching - Power OR-ing - Server power supplies - Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol VDS ID Parameter Conditions drain-source voltage 25 °C ≤ Tj ≤ 175 °C drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 Min [1] - Ptot total power dissipation Tmb = 25 °C; see Figure 2 - Tj junction temperature Static characteristics -55...