Datasheet Details
| Part number | PSMN2R8-40YSD |
|---|---|
| Manufacturer | Nexperia |
| File Size | 292.07 KB |
| Description | N-channel MOSFET |
| Datasheet | PSMN2R8-40YSD-nexperia.pdf |
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Overview: PSMN2R8-40YSD 4 June 2019 Preliminary data sheet 1. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 ID = 25 A; VDS = 20 V; VGS = 10 V; Fig. 12; Fig. 13 Min Typ Max Unit - - 40 V [1] - - 120 A - - 147 W -55 - 175 °C - 2.4 2.7 mΩ - 7 14 nC - 44 62 nC [1] 120A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. 2. Pinning information Table 2.
| Part number | PSMN2R8-40YSD |
|---|---|
| Manufacturer | Nexperia |
| File Size | 292.07 KB |
| Description | N-channel MOSFET |
| Datasheet | PSMN2R8-40YSD-nexperia.pdf |
|
|
|
Simplified outline 1 S source mb 2 S source 3 S source 4 G gate mb D mounting base;
connected to drain 1234 LFPAK56;
PowerSO8 (SOT669) Graphic symbol D G mbb076 S 3.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
PSMN2R8-40BS | MOSFET | NXP |
 |
PSMN2R8-40PS | MOSFET | NXP Semiconductors |
| Part Number | Description |
|---|---|
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