PSMN2R8-40YSD - N-channel MOSFET

Description

Table 3.

nexperia

Datasheet Details

Part number	PSMN2R8-40YSD
Manufacturer	nexperia
File Size	292.07 KB
Description	N-channel MOSFET
Datasheet	PSMN2R8-40YSD Datasheet
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PSMN2R8-40YSD 4 June 2019 Preliminary data sheet 1. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 ID = 25 A; VDS = 20 V; VGS = 10 V; Fig. 12; Fig. 13 Min Typ Max Unit - - 40 V [1] - - 120 A - - 147 W -55 - 175 °C - 2.4 2.7 mΩ - 7 14 nC - 44 62 nC [1] 120A Continuous current has been successfully demonstrated during application tests.

Published: Jul 28, 2019 |