PSMN4R2-40VSH Overview
Dual, standard level N-channel MOSFET in an LFPAK56D package (halfbridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side G1 FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive applications G2 D1 S1, D2 S2 aaa-028081.
PSMN4R2-40VSH Key Features
- LFPAK56D package with half-bridge configuration enables
- Reduced PCB layout plexity
- Module shrinkage through reduced ponent count
- Improved system level Rth(j-amb) due to optimized package design
- Lower parasitic inductance to support higher efficiency
- Footprint patibility with LFPAK56D Dual package
- NextpowerS3 technology
- Low power losses, high power density
- Superior avalanche performance
- Repetitive avalanche rated