PSMN4R2-40VSH
description
Dual, standard level N-channel MOSFET in an LFPAK56D package (halfbridge configuration), using Nextpower S3 technology.
An internal connection is made between the source (S1) of the high-side G1
FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance PWM and space constrained motor drive applications
G2
D1
S1, D2
S2 aaa-028081
2. Features and benefits
- LFPAK56D package with half-bridge configuration enables:
- Reduced PCB layout plexity
- Module shrinkage through reduced ponent count
- Improved system level Rth(j-amb) due to optimized package design
- Lower parasitic inductance to support higher efficiency
- Footprint patibility with LFPAK56D Dual package
- Nextpower S3 technology
- Low power losses, high power density
- Superior avalanche performance
- Repetitive avalanche rated
- LFPAK copper clip packaging provides high robustness and reliability
- Gull wing leads support high manufacturability and...
