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PSMN7R0-30YLC
N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.5 V; ID = 20 A; VDS = 15 V; see Figure 14; see Figure 15
QG(tot) total gate charge
VGS = 4.5 V; ID = 20 A; VDS = 15 V; see Figure 14; see Figure 15
Min Typ Max Unit
-
2.5 -
nC
-
7.9 -
nC
2. Pinning information
Table 2. Pin 1 2 3 4 mb
Pinning information
Symbol Description
S
source
S
source
S
source
G
gate
D
mounting base; connected to drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK; Power-SO8)
Graphic symbol
D G mbb076 S
Table 3.