PSMN7R0-30YLC Datasheet | Nexperia

N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data …continued Symbol Parameter Conditions Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 20 A; VDS = 15 V; see Figure 14; see Figure 15 QG(tot) total gate charge VGS = 4.5 V; ID = 20 A; VDS = 15 V; see Figure 14; see Figure 15 Min Typ Max Unit - 2.5 - nC - 7.9 - nC 2. Pinning information Table 2. Pin 1 2 3 4 mb Pinning information Symbol Description S source S source S source G gate D mounting base; connected to drain 3. Ordering information Simplified outline mb SOT669 (LFPAK; Power-SO8) Graphic symbol D G mbb076...