Nexperia PSMN9R5-100PS
This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.| Part No. | PSMN9R5-100PS |
|---|---|
| Datasheet | PSMN9R5-100PS Download |
| Manufacturer |  Nexperia |
| Description | N-channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High efficiency due to low switching and conduction losses● Suitable for standard level gate drive 3.
APPLICATIONS
● DC-to-DC converters● Load switching
● Motor control
● Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 15 A; Tj = 25 °C; resistance Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 60 A; VDS = 50 V; Fig. 14; Fig. 15 Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy VGS = 10 V; Tj(init) = 25 °C; ID = 89 A; Vsup ≤ 100 V; unclamped; RGS = 50 Ω Min Typ Max Unit - - 100 V - - 89 A - - 211 W - 8.16 9.6 mΩ - 23 - nC - 82 - nC - - 177 mJ Nexperia PSMN9R5-100PS N-channel 100 V 9.6 mΩ standard level MOSFET in T0220 5. Pinning information Table 2.
