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PSMNR60-25YLH - N-channel MOSFET

General Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon.

Low IDSS leakage even when hot, high efficiency and high current.

Rated to 300 A, optimized for DC load switch and hot-swap applications.

Key Features

  • 100% avalanche tested at I(AS) = 190 A.
  • Optimized for low RDSon.
  • Low leakage < 1 μA at 25 °C.
  • Low spiking and ringing for low EMI designs.
  • Optimized for 4.5 V gate drive.
  • Copper-clip for low parasitic inductance and resistance.
  • High reliability LFPAK package, qualified to 175 °C.
  • Wave solderable; exposed leads for optimal solder coverage and visual solder inspection 3.

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Full PDF Text Transcription for PSMNR60-25YLH (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PSMNR60-25YLH. For precise diagrams, and layout, please refer to the original PDF.

PSMNR60-25YLH N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology 30 September 2019 Product data sheet 1. General description Logic l...

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gy 30 September 2019 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current. Rated to 300 A, optimized for DC load switch and hot-swap applications. 2. Features and benefits • 100% avalanche tested at I(AS) = 190 A • Optimized for low RDSon • Low leakage < 1 μA at 25 °C • Low spiking and ringing for low EMI designs • Optimized for 4.

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