PSMNR60-25YLH Overview
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized for low RDSon. Low IDSS leakage even when hot, high efficiency and high current. Rated to 300 A, optimized for DC load switch and hot-swap applications.
PSMNR60-25YLH Key Features
- 100% avalanche tested at I(AS) = 190 A
- Optimized for low RDSon
- Low leakage < 1 μA at 25 °C
- Low spiking and ringing for low EMI designs
- Optimized for 4.5 V gate drive
- Copper-clip for low parasitic inductance and resistance
- High reliability LFPAK package, qualified to 175 °C
- Wave solderable; exposed leads for optimal solder coverage and visual solder inspection