PSMNR82-30YLE
description
N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linearmode applications.
2. Features and benefits
- Fully optimized Safe Operating Area (SOA) for superior linear mode operation
- Optimized for low RDSon / low I2R conduction losses
- LFPAK56E package for applications that demand the highest performance and reliability in a
30 mm2 footprint
- Low leakage < 1 µA at 25 °C
- Copper-clip for low parasitic inductance and resistance
- High reliability LFPAK package, qualified to 175 °C
3. Applications
- Hot swap in 12 V-20 V applications
- e-Fuse
- DC switch
- Load switch
- Battery protection
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon drain-source on-state resistance
Dynamic characteristics...
