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PSMNR90-50SLH - N-channel MOSFET

General Description

410 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package.

Key Features

  • 410 Amp continuous current capability.
  • LFPAK88 (8 x 8 mm) LFPAK-style low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy solder-joint inspection.
  • Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating.
  • Ideal replacement for D2PAK and 10 x 12 mm leadless package types.
  • Qualified to 175 °C.
  • Avalanche rated, 100 % tested.
  • Low QG, QGD and QOSS for high efficie.

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Full PDF Text Transcription for PSMNR90-50SLH (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PSMNR90-50SLH. For precise diagrams, and layout, please refer to the original PDF.

PSMNR90-50SLH N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 15 March 2022 Product data sheet 1. General description 410 Amp continuo...

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March 2022 Product data sheet 1. General description 410 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

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