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PUMD12-Q - NPN/PNP resistor-equipped double transistor

General Description

NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) SurfaceMounted Device (SMD) plastic package.

2.

Key Features

  • 100 mA output current capability.
  • Built-in bias resistors.
  • Simplified circuit design.
  • Reduces component count.
  • Reduces pick and place costs.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Datasheet Details

Part number PUMD12-Q
Manufacturer Nexperia
File Size 272.63 KB
Description NPN/PNP resistor-equipped double transistor
Datasheet download datasheet PUMD12-Q Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PUMD12-Q NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ 16 December 2021 Product data sheet 1. General description NPN/PNP double Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) SurfaceMounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplified circuit design • Reduces component count • Reduces pick and place costs • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • Low current peripheral driver • Control of IC inputs • Replacement of general purpose transistors in digital applications 4. Quick reference data Table 1.