onsemi 2N3019S
Low Power Transistor
| Part No. | 2N3019S |
|---|---|
| Datasheet | 2N3019S Download |
| Manufacturer |  onsemi |
| Description | Low Power Transistor |
| Buy | Stock & Price |
FEATURES
● MIL−PRF−19500/391 Qualified● Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 80 Collector −Base Voltage VCBO 140 Emitter −Base Voltage VEBO 7.0 Collector Current − Continuous IC 1.0 Total Device Dissipation @ TA = 25°C 2N3019, 2N3019S 2N3700 PT 800 500 Unit Vdc Vdc Vdc Adc mW Total Device Dissipation @ TC = 25°C 2N3019, 2N3019S 2N3700 PT W 5.0 1.0 Operating and Storage Junction Temperature Range TJ, Tstg −65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient 2N3019, 2N3019S 2N3700 RqJA °C/W 195 325 Thermal Resistance, Junction to Case 2N3019, 2N3019S 2N3700 RqJC °C/W 30 150 Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
