onsemi 2N4123
NPN Transistors
| Part No. | 2N4123 |
|---|---|
| Datasheet | 2N4123 Download |
| Manufacturer |  onsemi |
| Description | NPN Transistors |
| Buy | Stock & Price |
FEATURES
● Pb−Free Packages are Available*MAXIMUM RATINGS
Rating Collector−Emitter Voltage Symbol Value Unit VCEO Vdc 2N4123 30 2N4124 25 Collector−Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter−Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 5.0 Vdc 200 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. COLLECTOR 3 2 BASE 1 EMITTER TO−92 CASE 29 STYLE 1 123 STRAIGHT LEA...
