onsemi 2N4401
NPN Silicon Transistor
| Part No. | 2N4401 |
|---|---|
| Datasheet | 2N4401 Download |
| Manufacturer |  onsemi |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Pb−Free Packages are Available*MAXIMUM RATINGS
Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 40 Vdc 60 Vdc 6.0 Vdc 600 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to °C +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. COLLECTOR 3 2 BASE 1 EMITTER TO−92 CASE 29 STYLE 1 123 STRAIGHT LEAD BULK PACK 1 2 3 BENT LEAD...
