onsemi 2N4918
GENERAL.PURPOSE POWER TRANSISTORS
| Part No. | 2N4918 |
|---|---|
| Datasheet | 2N4918 Download |
| Manufacturer |  onsemi |
| Description | GENERAL.PURPOSE POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A● Excellent Power Dissipation, PD = 30 W @ TC = 25_C
● Excellent Safe Operating Area
● Gain Specified to IC = 1.0 A
● Complement to NPN 2N4921, 2N4922, 2N4923
● Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit Collector − Emitter Voltage VCEO Vdc 2N4918 40 2N4919 60 2N4920 80 Collector − Base Voltage VCBO Vdc 2N4918 40 2N4919 60 2N4920 80 Emitter − Base Voltage Collector Current − Continuous (Note 1) VEBO 5.0 Vdc IC 1.0 Adc (Note 2) 3.0 Base Current IB Total Power Dissipation @ TA = 25°C PD Derate above 25°C 1.0 Adc 30 W 0.24 W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The 1.0 A max IC value is based upon JEDEC current gain requirements. The 3.0 A max value is based upon actual current−handling capability of the device (See Figure 5).
