onsemi 2N5190
Silicon NPN Power Transistors
| Part No. | 2N5190 |
|---|---|
| Datasheet | 2N5190 Download |
| Manufacturer |  onsemi |
| Description | Silicon NPN Power Transistors |
| Buy | Stock & Price |
FEATURES
● ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V● Epoxy Meets UL 94 V−0 @ 0.125 in.
● Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage 2N5190 2N5191 2N5192 2N5190 2N5191 2N5192 Symbol VCEO Value 40 60 80 40 60 80 5.0 4.0 1.0 40 320 –65 to +150 Unit Vdc 4.0 AMPERES NPN SILICON POWER TRANSISTORS 40, 60, 80 VOLTS − 40 WATTS TO−225AA CASE 77 STYLE 1 3 2 1 Collector−Base Voltage VCBO Vdc Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC IB PD TJ, Tstg Vdc Adc Adc W mW/°C °C YWW 2 N519xG MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol RqJC Max 3.12 Unit °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
