onsemi 2N5192
POWER TRANSISTORS
| Part No. | 2N5192 |
|---|---|
| Datasheet | 2N5192 Download |
| Manufacturer |  onsemi |
| Description | POWER TRANSISTORS |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB 2N5191 60 60 2N5192 80 80 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current 5.0 4.0 1.0 Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 40 320 Watts mW/_C _C TJ, Tstg –65 to +150 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE 4 AMPERE POWER TRANSISTORS SILICON NPN 60–80 VOLTS 40 WATTS THERMAL CHARACTERISTICS Characteristic Symbol θJC Max Unit _C CASE 77–09 TO–225AA TYPE Thermal Resistance, Junction to Case 3.12 *ELECTRICAL CHARACTERISTICS
(TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector–Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) VCEO(sus) Vdc 2N5191 2N5192 60 80 — — — — — — — — — — — ICEO mAdc 2N5191 2N5192 1.0 1.0 0.1 0.1 2.0 2.0 Collector Cutoff Current (VCE = 60 Vdc, V...
