onsemi 2N5657G
Plastic NPN Silicon High-Voltage Power Transistors
| Part No. | 2N5657G |
|---|---|
| Datasheet | 2N5657G Download |
| Manufacturer |  onsemi |
| Description | Plastic NPN Silicon High-Voltage Power Transistors |
| Buy | Stock & Price |
FEATURES
● Excellent DC Current Gain● High Current−Gain − Bandwidth Product
● These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
(Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N5655G 2N5657G VCEO 250 350 Vdc Collector−Base Voltage 2N5655G 2N5657G VCB Vdc 275 375 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEB 6.0 Vdc IC 0.5 Adc ICM 1.0 Adc IB 1.0 Adc PD 20 W 0.16 W/°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 °C/W Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should
