onsemi 2N6027
Programmable Unijunction Transistor
FEATURES
● Programmable − RBB, h, IV and IP● Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA
● Low Gate to Anode Leakage Current − 10 nA Maximum
● High Peak Output Voltage − 11 V Typical
● Low Offset Voltage − 0.35 V Typical (RG = 10 kW)
● Pb−Free Packages are Available* PUTs 40 VOLTS, 300 mW G A K 1 2 3 TO−92 (TO−226AA) CASE 029 STYLE 16 MARKING DIAGRAM 2N 602x AYWW G G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev.6 1 2N602x = Device Code x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 1 Anode 2 Gate 3 Cathode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value.