onsemi 2N6394
Silicon Controlled Rectifiers
FEATURES
● Glass Passivated Junctions with Center Gate Geometry for Greater●
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● Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 V Pb−Free Packages are Available* SCRs 12 AMPERES RMS 50 thru 800 VOLTS G A Unit V K
MAXIMUM RATINGS
† (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6394 2N6395 2N6397 2N6399 On-State RMS Current (180° Conduction Angles; TC = 90°C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 90°C) Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 90°C) Forward Average Gate Power (t = 8.3 ms, TC = 90°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 90°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 100 400 800 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 12 100 40 20 0.5 2.